MT45W8MW16BGX-701 IT TR

128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/ Page/Burst CellularRAM 1.5 Memory Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages – 1.70–1.95V VCC – 1.7–3.6V1 VCCQ • Random access time: 70ns • Burst mode READ and WRITE access – 4, 8, 16, or 32 words, or continuous burst – Burst wrap or sequential – MAX clock rate: 133 MHz (tCLK = 7.5ns) – Burst initial latency: 35ns (5 clocks) at 133 MHz – tACLK: 5.5ns at 133 MHz • Page mode READ access – Sixteen-word page size – Interpage READ access: 70ns – Intrapage READ access: 20ns • Low power consumption – Asynchronous READ: